Tuesday, September 17

3:35 PM
3:35 PM - 4:25 PM PDT

Photonics Invited Talk: TBA

TBA

Photonics Invited Talk: TBA

4:55 PM
4:55 PM - 5:20 PM PDT

3A.1 ESD Robustness of Germanium Photodetectors in Advanced Silicon Photonics Technology

Authors: Shih-Hung Chen, A. Tsiara, M. Van De Peer, M. Simicic, Y. Ban, P.-Y. Fu, W.-C. Chen, J. Van Campenhout, Ph. Absil, imec; S. Musibau, K. Serbulova, K. Croes, imec, KU Leuven; K.-H. Kao, imec, National Cheng Kung University

A comprehensive ESD robustness study of 5 different Ge photodetectors in advanced Si photonic technology is presented. The measurement results disclose that the main impact on the ESD transient IV characteristics is from the contact location of the anode terminal. Still, the failure mechanisms need to be further clarified by physical failure analysis as a part of the future work. 

Shih-Hung Chen

Shih-Hung Chen

imec

Shih-Hung Chen has been with imec since 2010, and as ESD team lead and principal member of technical staff (PMTS) since 2019. He authored or co-authored more than 100 conference and journal publications. His current research interests include ESD protections in advanced sub-5nm technology nodes, in 3D/2.5D IC applications, and in Design Technology Co-Optimization (DTCO), System Technology Co-Optimization (STCO) with the integrations of III-V compounds.

3A.1 ESD Robustness of Germanium Photodetectors in Advanced Silicon Photonics Technology

5:20 PM
5:20 PM - 5:45 PM PDT

3A.2 ESD-EOS-OVP Protection Network for Battery Pins

Authors: Vladislav Vashchenko, Hossein Sarbishaei, Dimitrios Kontos, Analog Devices Corp; Andrei Shibkov, Angstrom Design Automation LLC

The main components and strategy for protection of battery monitoring IC is presented. The principles of the pin-specific ESD, EOS and overvoltage (OVP) protection are discussed. Experimental results are presented for the short TLP and long pulse stress. Protection networks based on avalanche diode and NLDMOS OVP clamp are compared.

Vladislav Vashchenko

Vladislav Vashchenko

Analog Devices Corp.

Dr. Vladislav Vashchenko is currently Sr. Director Power ESD Group at Analog Devices Corp since 2011. He is responsible for aspects of power analog ESD/Latchup IC co-design business process and technology development. Previously he managed ESD technology development at National Semiconductor (2000-2011). He received MS Engineer-Physicist (1987), Ph.D. in Physics of Semiconductors from MIPT (1990), "Doctor of Science in Microelectronics" habilitation degree (1997). He is author of 150 U.S. patents, over 120 papers, co-author of the three books in ESD field.

3A.2 ESD-EOS-OVP Protection Network for Battery Pins

5:45 PM
5:45 PM - 6:10 PM PDT

3A.3 Bidirectional DIAC Devices with Two-Stage Triggering

Authors: Michael Amato, Vladislav Vashchenko, Analog Devices Corp.

A dual-direction SCR (DIAC), with control of the holding voltage and turn-on by layout parameters, is presented. The effect of additional p-emitter region inside the device floating isolation region is studied. By using an n-collector and/or a p-emitter in the blocking junction of the device, the holding voltage and high current capabilities of the device can be adjusted to system level requirements. Experimental measurements and comprehensive mixed-mode TCAD simulations are presented for a 20V tolerant system level cell.

Michael Amato

Michael Amato

Analog Devices Corp.

Michael Amato graduated from Rensselaer Polytechnic Institute with a BSEE in ‘82 and MSEE in '84, with emphasis in semiconductor device and IC technology. At Philips Research he led teams developing new monolithic Power IC technologies and TFT arrays for LCD HDTV. Working at Allegro Microsystems & CPClare (IXYS), he also directed CAD/PDK development and device modeling. In 2004 he joined Linear Technology Corp (now Analog Devices Inc) directing all ESD Co-design and new ESD device development for in-house and foundry processes, developing unique ESD solutions for High Voltage, Power, Analog, Digital, and Mixed Signal ICs.

3A.3 Bidirectional DIAC Devices with Two-Stage Triggering

6:10 PM
6:10 PM - 6:30 PM PDT

Authors Corner for 3A.1, 3A.2, and 3A.3

Meet with the authors of 3A.1, 3A.2, and 3A.3 to discuss their papers in more detail and ask additional questions.

Michael Amato

Michael Amato

Analog Devices Corp.

Michael Amato graduated from Rensselaer Polytechnic Institute with a BSEE in ‘82 and MSEE in '84, with emphasis in semiconductor device and IC technology. At Philips Research he led teams developing new monolithic Power IC technologies and TFT arrays for LCD HDTV. Working at Allegro Microsystems & CPClare (IXYS), he also directed CAD/PDK development and device modeling. In 2004 he joined Linear Technology Corp (now Analog Devices Inc) directing all ESD Co-design and new ESD device development for in-house and foundry processes, developing unique ESD solutions for High Voltage, Power, Analog, Digital, and Mixed Signal ICs.

Shih-Hung Chen

Shih-Hung Chen

imec

Shih-Hung Chen has been with imec since 2010, and as ESD team lead and principal member of technical staff (PMTS) since 2019. He authored or co-authored more than 100 conference and journal publications. His current research interests include ESD protections in advanced sub-5nm technology nodes, in 3D/2.5D IC applications, and in Design Technology Co-Optimization (DTCO), System Technology Co-Optimization (STCO) with the integrations of III-V compounds.

Vladislav Vashchenko

Vladislav Vashchenko

Analog Devices Corp.

Dr. Vladislav Vashchenko is currently Sr. Director Power ESD Group at Analog Devices Corp since 2011. He is responsible for aspects of power analog ESD/Latchup IC co-design business process and technology development. Previously he managed ESD technology development at National Semiconductor (2000-2011). He received MS Engineer-Physicist (1987), Ph.D. in Physics of Semiconductors from MIPT (1990), "Doctor of Science in Microelectronics" habilitation degree (1997). He is author of 150 U.S. patents, over 120 papers, co-author of the three books in ESD field.

Authors Corner for 3A.1, 3A.2, and 3A.3