Agenda | ESDA Events

Time

Location

Track

Session

Monday, October 2

8:35 AM

8:35 AM - 9:25 AM PDT

Invited Talk: ESD and EOS Protection in GaN Power ICs

Exhibit Hall D
GaN
Track 2

Due to their excellent material properties, GaN-based devices for power electronics have been the subject of intensive research for >20 years. However, only in the last few years, has the commercial adoption started to reach a critical mass. The power electronics community is now rapidly moving to adopt wide bandgap materials in power systems to achieve the often-competing objectives of small size, high efficiency, high reliability, and low cost. The subject of ESD/EOS protection in GaN devices is often overlooked in the R&D stage but becomes an essential priority as devices scale into high-volume production. This talk will review the recent developments in the GaN industry with respect to ESD/EOS protection and explain the critical role of GaN Power ICs in creating robust devices.

Nick Fichtenbaum

Navitas Semiconductor, Inc.

Nick Fichtenbaum is a Co-founder and Vice President of Engineering at Navitas Semiconductor and brings with him nearly 20 years of experience developing GaN materials and devices. Prior to Navitas, Nick was a VP at the private investment firm Malibu IQ, which lead to the creation of Navitas. As an early employee of Transphorm, Nick served as both a member of the technical staff and manager of material engineering where he developed the GaN on Si epi technology. Nick has published over 40 peer-reviewed articles based upon his GaN research and been awarded 20 patents related to GaN power electronics. Nick holds a BA in physics from Denison University, a BS in electrical engineering from Washington University in St. Louis, and a Ph.D. in electrical engineering from the University of California, Santa Barbara.

Invited Talk: ESD and EOS Protection in GaN Power ICs

Exhibit Hall D
GaN
Track 2

9:55 AM

9:55 AM - 10:45 AM PDT

Invited Talk: GaN MOSHEMT Transistor Technology and Integrated ESD Device Solutions on 300mm GaN-on-Si(111) Wafers

Exhibit Hall D
GaN
Track 2

GaN is a high electron mobility and wide-band gap semiconductor. Recent progress in GaN transistor technology [1, 2] shows it emerging as a strong candidate for power and RF applications ranging from low (12V) to high voltage (1200V). Today, GaN is an n-channel-only transistor technology because of its poor hole mobility and low P-doping. This makes it extremely challenging to form viable P-N junctions in GaN for ESD devices. Here, we will introduce the industry’s first GaN MOSHEMT technology on a 300 mm GaN-on-Si(111) wafer, and present two candidate solutions for integrated ESD device: (a) GaN Schottky diode and (b) Si P-N diode.
References
[1] H. W. Then et al., "Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 35.1.1-35.1.4.
[2] G. Gupta et al., "1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 35.2.1-35.2.4.

Han Wui Then

Intel

Han Wui Then is a Principal Engineer at Components Research, Intel Corporation, working on advanced transistor and chiplet technologies. He currently leads the process technology research in gallium nitride electronics and 3D CMOS integration, where he pioneered the development of 300mm GaN-on-Si(111) MOSHEMT technology and demonstrated the first 3D monolithic integration of GaN and Si CMOS. He has published over 50 journal and conference papers and holds >180 US patents on semiconductor technologies. He received his Ph.D. in ECE from the University of Illinois at Urbana-Champaign in 2009.

Invited Talk: GaN MOSHEMT Transistor Technology and Integrated ESD Device Solutions on 300mm GaN-on-Si(111) Wafers

Exhibit Hall D
GaN
Track 2

11:15 AM

11:15 AM - 11:40 AM PDT

2A.1 Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs

Exhibit Hall D
GaN
Track 2

Authors: Mohammad Ateeb Munshi, Mehak Ashraf Mir, Rasik Malik, Vipin Joshi, Rajarshi Roy Chaudhury, Zubear Khan, Mayank Shrivastava, Indian Institute of Science

In this work, the role of temperature on the ESD reliability of AlGaN/GaN HEMTs is reported. Two stacks with different buffer properties are compared. The trigger voltage (Vtr) was seen to decrease with increasing temperature in stack 1, while Vtr remained independent of the temperature for stack 2.

Mohammad Munshi

Indian Institute of Science

Mohammad Ateeb Munshi received his M.Tech degree in Microelectronics from the National Institute of Technology, Srinagar, in 2021. He is currently pursuing his Ph.D. at the Indian Institute of Science, Bangalore, India. His research interests include the fabrication, characterization, and reliability testing of GaN-on-Si HEMTs.

2A.1 Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs

Exhibit Hall D
GaN
Track 2

11:40 AM

11:40 AM - 12:05 PM PDT

2A.2 Interplay of Surface Passivation and Electric Field in Determining ESD Behavior of p-GaN Gated AlGaN/GaN HEMTs

Exhibit Hall D
GaN
Track 2

Authors: Rasik Rashid Malik, Avinas N. Shaji, Jayshree Jayshree, Zubear Khan, Madhura Bhattacharya, Mohammad Ateeb Munshi, Rajarshi Roy Chaudhuri, Vipin Joshi, Mayank Shrivastava, Indian Institute of Science, Bangalore

In this paper, the electric field dependence of ESD robustness of p-GaN gated HEMTs is presented. The electric field was modulated using novel bilayer passivation, and its impact on ESD robustness was investigated. Distinct failure modes were revealed by studying leakage behavior, electroluminescence microscopy and SEM imaging of ESD-damaged devices.

Rasik Rashid Malik

Indian Institute of Science (IISc) Bangalore

Rasik Rashid Malik received the M.Tech. degree in Microelectronics from the National Institute of Technology, Srinagar, before joining the Indian Institute of Science, Bangalore, India, for his Ph.D. in 2021. His current research interests include the physical exploration of reliability constraints in E-mode AlGaN/GaN HEMTs and addressing these challenges through novel device designs and technology.

2A.2 Interplay of Surface Passivation and Electric Field in Determining ESD Behavior of p-GaN Gated AlGaN/GaN HEMTs

Exhibit Hall D
GaN
Track 2

12:05 PM

12:05 PM - 12:30 PM PDT

2A.3 Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

Exhibit Hall D
GaN
Track 2

Authors: Abhinay Sandupatla, Shih-Hung Chen, Nadine Collaert, imec; Nikhil Mane, Nilam Pradhan, MIT-World Peace University; Bertrand Parvaris, imec, VUB Brussels

GaN HEMT exhibits electric field (REF) failure, constant power (CP) failure, and current crowding (CC) HBM failure. HBM robustness against REF, CP, and CC failures can be improved (by 51.7%, 6.7 times, and 57.9%) by using field-plate, multi-finger devices, and back-barrier respectively, or increasing gate-ohmic spacing by 78.6% to 215%.

Abhinay Sandupatla

imec

Abhinay Sandupatla is a Post Doctoral researcher at IMEC since Nov 2021. He completed his Ph.D. on III-V (GaN) devices from Nanyang Technological University, Singapore, in 2019. He has received his MS from Syracuse University, NY, in Electrical Engineering and BE from the University of Pune, India, in Electronics and Telecommunication. He has authored or co-authored 22 journals and conference proceedings, including APEX, EDS, JJAP, IEDM, and others. His research topics include RF ESD characterization for devices and circuits in III-V/Si technology and modeling.