Monday, October 2

8:35 AM

Invited Talk: ESD and EOS Protection in GaN Power ICs

9:55 AM

Invited Talk: GaN MOSHEMT Transistor Technology and Integrated ESD Device Solutions on 300mm GaN-on-Si(111) Wafers

11:15 AM

2A.1 Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs

11:40 AM

2A.2 Interplay of Surface Passivation and Electric Field in Determining ESD Behavior of p-GaN Gated AlGaN/GaN HEMTs

12:05 PM

2A.3 Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

12:30 PM

Authors Corner 2A.1, 2A.2, & 2A.3